technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com npn silicon dual transistor qualified per mil-prf-19500 /355 t4-lds-0202 rev. 1 (110638) page 1 of 4 devices levels 2n2919 2n2919l 2n2919u jan 2n2920 2n2920l 2N2920U jantx jantv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 60 vdc collector-base voltage v cbo 70 vdc emitter-base voltage v ebo 6.0 vdc collector current i c 30 madc one section 1 both sections 2 total power dissipation @ t a = +25 c p t 200 350 mw operating & storage junction temperature range t j , t stg -65 to +200 c notes: 1. derate linearly 1.143mw/c for t a > +25c (one section) 2. derate linearly 2.000mw/c for t a > +25c (both sections) electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter br eakdown voltage v (br)ceo vdc i c = 10madc; pulsed 60 collector-base cutoff current i cbo adc adc v cb = 45vdc v cb = 70vdc 2.0 10 emitter-base cutoff current i ebo v eb = 5.0vdc v eb = 6.0vdc 2.0 10 adc to-78 u - package
technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0202 rev. 1 (110638) page 2 of 4 electrical characte ristics (con?t) parameters / test conditions symbol min. max. unit on charactertics forward-current transfer ratio i c = 10 adc, v ce = 5.0vdc i c = 1.0madc, v ce = 5.0vdc 2n2919, 2n2919l , 2n2919u h fe 60 100 150 240 325 600 i c = 10 adc, v ce = 5.0vdc i c = 1.0madc, v ce = 5.0vdc 2n2920, 2n2920l, 2N2920U h fe 175 235 300 600 800 1000 collector-emitter saturation voltage v ce(sat) vdc i c = 1.0madc, i b = 100 dynamic characteristics parameters / test conditions symbol min. max. unit forward current transfer ratio, magnitude |h fe | i c = 0.5madc, v ce = 5.0vdc, f = 20mhz 3.0 20 small-signal short circuit input impedance h je k i c = 1.0madc, v ce = 5vdc, f = 1.0khz 3.0 30 small-signal short circuit output admittance h oe mhos i c = 1.0madc, v ce = 5vdc, f = 1.0khz 60 output capacitance v cb = 5.0vdc, i e = 0, 100khz f 1.0mhz c obo 5.0 pf noise figure db i c = 10 adc, v ce = 5vdc, f = 100hz, r g = 10k f 1 5.0 i c = 10 adc, v ce = 5vdc, f = 1.0khz, r g = 10k f 2 3.0 i c = 10 adc, v ce = 5vdc, f = 10khz, r g = 10k f 3 3.0
technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0202 rev. 1 (110638) page 3 of 4 package dimensions notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 tab shown omitted. 4 lead number 4 and 8 omitted on this variation. 5 beyond r maximum, tw shall be held to a minimum length of .21 inch (5.33 mm) 6 tl shall be measured from maximum cd. 7 details of outline in this zone are optional. 8 cd1 shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 9 leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at a maximum material condition (mmc) relative to the tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedures described on gauge drawing gs-1. 10 lu applies between l1 and l2. ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 11 for transistor types 2n2919 and 2n2920, ll is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum. 12 for transistor type 2n2919l and 2n2920l, ll is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45 mm) maximum. 13 in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 1. physical dimensions 2n2919, 2n2919l, 2n2920, and 2n2920l (to-78) . dimensions symbol inches millimeters notes min max min max cd .335 .370 8.51 9.40 cd1 .305 .335 7.75 8.51 ch .140 .260 3.56 6.60 ht .009 .041 0.23 1.04 lc .140 .160 3.56 4.06 lc1 .200 tp 5.08 tp 9 ld .016 .021 .041 0.53 10 ll see notes 10, 11 and 12 lu .016 .019 .041 0.48 10 l1 .050 1.27 10 l2 .250 6.35 10 p .100 2.54 8 q .050 1.27 7 tl .029 .045 0.74 1.14 5, 6 tw .028 .034 0.71 0.86 4, 5 r .010 0.25 45tp 45tp 9
technical data sheet 6 lake street, lawrence, ma 01841 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0202 rev. 1 (110638) page 4 of 4 symbol dimensions inches millimeters min max min max bl .240 .250 6.10 6.35 bl2 .250 6.35 bw .165 .175 4.19 4.44 bw2 .175 4.44 ch .044 .080 1.12 2.03 lh .026 .039 0.66 0.99 ll1 .060 .070 1.52 1.78 ll2 .082 .098 2.08 2.49 ls1 .095 .105 2.41 2.67 ls2 .045 .055 1.14 1.39 lw .022 .028 0.56 0.71 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 in accordance with amse y14.5m , diameters are equivalent to x symbology. figure 2 . physical dimensions (2n2919u and 2N2920U) surface mount . pin no. transistor 1 collector no. 1 2 base no. 1 3 base no. 2 4 collector no. 2 5 emitter no. 2 6 emitter no. 1
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